Tesla Reportedly Dual-Sources AI5 Chips from TSMC (3nm) and Samsung (2nm)
Tesla is reportedly dual-sourcing its upcoming AI5 chips, with the TSMC-manufactured version utilizing a 3nm FinFET process and the Samsung version using a 2nm GAA process. The TSMC version, designed in partnership with Global Unichip Corp (GUC), is expected to tape out one quarter earlier than Samsung's version. This dual-sourcing strategy reduces Tesla's supply chain risks for critical autonomous driving and robotics hardware, but the architectural differences between FinFET and GAA mean Tesla must manage two distinct physical chip designs. It also highlights the intense competition between TSMC and Samsung in securing high-profile AI chip contracts. Because Samsung's 2nm process relies on Gate-All-Around (GAA) transistors while TSMC's 3nm process uses Fin Field-Effect Transistors (FinFET), the Samsung version will likely incur higher manufacturing costs. Additionally, reports suggest Tesla plans to continue this dual-sourcing strategy for future generations, such as the AI6 and AI6.5 chips.
## BACKGROUND
FinFET is a 3D transistor design where the gate wraps around three sides of a vertical channel, which has been the industry standard for advanced nodes. GAA (Gate-All-Around) is a newer architecture that wraps the gate around all sides of horizontal nanosheet channels, offering better electrostatic control and scaling than FinFET at sub-3nm nodes.