SK Hynix Breaks Ground on $4B Advanced Packaging Facility in Indiana
SK Hynix has officially broken ground on its $4 billion advanced packaging facility in West Lafayette, Indiana. The plant is scheduled to complete cleanroom construction by October 2028 and begin mass-producing next-generation High Bandwidth Memory (HBM) in the second half of 2029. This facility represents a major step in bringing advanced semiconductor packaging capabilities to the US, which is crucial for securing the local AI hardware supply chain. It will also foster local R&D through partnerships with Purdue University and other commercial collaborators. Because SK Hynix lacks front-end DRAM fabrication facilities in the US, the Indiana plant will rely on advanced silicon wafers manufactured in South Korea. The site will also feature an advanced packaging R&D testbed to accelerate prototyping and performance verification.
## BACKGROUND
High Bandwidth Memory (HBM) is a high-performance 3D-stacked DRAM technology essential for AI accelerators due to its high bandwidth and efficiency. Advanced packaging is the process of integrating multiple semiconductor dies into a single package, which has become critical for extending performance gains as traditional transistor scaling slows down.