Samsung Seeks Over 3x Price Premium for 2027 HBM4 Memory
Samsung Electronics is reportedly negotiating 2027 supply contracts for its next-generation HBM4 memory, seeking prices between $4.00 and $5.00 per 1Gb (at least $4.50/Gb). This represents a more than threefold increase over current HBM3E unit prices, which hover around $1.50/Gb. The sharp price jump reflects the soaring manufacturing complexity and strong demand for high-bandwidth memory in next-generation AI hardware. Rising memory costs could substantially elevate overall system expenses for hyperscalers and chipmakers building future AI infrastructure. Samsung has already locked in the majority of its 2027 HBM volume allocations, with contract negotiations expected to finalize this month. Unlike earlier generations, HBM4 adopts a wider interface and custom base logic dies, contributing directly to higher silicon production costs.
## BACKGROUND
High Bandwidth Memory (HBM) is a 3D-stacked DRAM technology tailored to provide high data throughput for AI training and high-performance computing workloads. As AI chip performance advances, fast memory bandwidth has become a key bottleneck, prompting leading vendors like Samsung, SK Hynix, and Micron to push the boundaries of HBM speed and architecture.