Samsung Reportedly Achieves Nearly 80% Yield for Next-Generation HBM4 Memory

Samsung Electronics has reportedly reached a yield rate of nearly 80% for its next-generation HBM4 memory, accelerating its production capacity ramp-up. This milestone brings Samsung close to its target originally set for the end of 2026, up from a yield of around 60% during preliminary mass production in February. High yield rates are crucial for the commercial viability of HBM4, which is in high demand for AI accelerators and high-performance computing. By securing higher yields, Samsung can aggressively allocate more DRAM wafer capacity to HBM4 and better compete with rivals like SK Hynix and Micron. Samsung plans to triple its HBM4 sales revenue this quarter compared to the previous quarter, aiming for HBM to account for over 60% of its total HBM revenue in the second half of the year. This capacity ramp-up comes as HBM production requires significantly more wafer capacity than standard DDR5, compressing general-purpose DRAM supply.