Samsung Predicts HBM Will Consume 30% of DRAM Wafer Capacity Next Year

Samsung Electronics Executive Vice President Kim Taewoo revealed that High Bandwidth Memory (HBM) is projected to account for nearly 30% of total DRAM wafer capacity next year, up from approximately 20% currently. Because HBM shares wafer production lines with conventional DRAM, shifting more production capacity to HBM to fulfill surging AI demand could squeeze the supply of standard DRAM. This structural reallocation may lead to higher memory prices across consumer and enterprise electronics markets. HBM utilizes 3D vertical stacking of multiple DRAM dies to deliver ultra-fast data transfer speeds required for AI processors. The global HBM market remains highly consolidated among three main semiconductor giants: SK Hynix, Samsung Electronics, and Micron Technology.