Samsung and Broadcom Sign $200 Billion Partnership for HBM and 2nm Chips
Samsung Electronics and Broadcom have signed a memorandum of understanding for a five-year partnership valued at over $200 billion through 2030. The collaboration will focus on High Bandwidth Memory (HBM), 2nm and below foundry processes, and advanced packaging technologies for AI and networking chips. This massive deal strengthens Samsung's position in the competitive AI hardware market by securing a major customer for its advanced foundry and memory services. It also ensures Broadcom has a stable supply of cutting-edge HBM and next-generation manufacturing capabilities to power its AI accelerators and networking hardware. The partnership includes utilizing Samsung's 2nm process for Broadcom's wireless broadband communication (WBC) products. Additionally, it extends to 2.3D and 2.5D advanced packaging technologies to integrate logic chips with HBM, optimizing performance and energy efficiency.
## BACKGROUND
High Bandwidth Memory (HBM) is a 3D-stacked DRAM architecture that offers significantly higher data throughput and lower power consumption compared to traditional memory, making it essential for AI workloads. As traditional chip scaling slows down, advanced packaging technologies like 2.5D are used to connect multiple chips (such as processors and HBM) on a single substrate to boost performance.