Renesas Launches Its First Low-Voltage 100V E-Mode GaN Power Transistors

Renesas Electronics introduced its first low-voltage 100V enhancement-mode (E-mode) GaN discrete power transistor series, featuring models such as the RTP100E005G1FL and RTP100E1P2G1FL-DSC. Designed for AI data centers, humanoid robotics, and industrial automation, these transistors improve power efficiency by 1% to 3% while reducing switching losses by 40% to 70% compared to traditional silicon MOSFET designs. Expanding into low-voltage GaN enables Renesas to meet the rising demand for high-power-density components in energy-intensive AI power supplies and robotics. By providing footprints compatible with standard silicon MOSFETs, hardware engineers can seamlessly upgrade existing circuits to GaN without expensive PCB redesigns. The new GaN family achieves up to a 35% reduction in hard-switching Figure of Merit (FOM) and up to a 63% reduction in soft-switching FOM compared to competing GaN devices. Additionally, these transistors completely eliminate reverse recovery charge (Qrr) losses and feature pin-compatible packaging for drop-in replacement of silicon MOSFETs.