Micron Plans to Introduce vHBM and vEIM Memory by 2028
Micron announced plans during its 2026 Technology Symposium to introduce two novel 3DS memory solutions, vHBM and vEIM, by 2028 alongside standard HBM5. These solutions utilize bump-less hybrid bonding technology to achieve dense interconnects and high bandwidth for computing and edge AI inference. These vertically stacked memory technologies significantly shorten data communication paths, reduce energy consumption, and boost bandwidth efficiency for demanding AI workloads. This represents a crucial advancement in hardware engineering as the industry transitions further into 3D stacking and advanced packaging. The vHBM vertically stacks DRAM Die, Base Die, and XPU logic chips, while the first-generation vEIM targets edge AI inference with a goal of 2 TB/s bandwidth and energy efficiency under 1 pJ/bit. Both solutions will incorporate integrated thermal management solutions.
## BACKGROUND
High Bandwidth Memory (HBM) is a high-performance RAM interface for 3D-stacked DRAM that provides high bandwidth while reducing power consumption and footprint. Hybrid bonding is an advanced packaging technique that allows direct copper-to-copper and dielectric-to-dielectric connections without traditional micro-bumps, enabling much higher interconnect densities between stacked silicon dies.