MemSilicon Completes Tape-Out of Its First 1Gb RRAM Chip 'MountTai-1'
MemSilicon has announced the successful tape-out of its first 1Gb RRAM chip, named 'MountTai-1', which utilizes a 28nm CMOS process and a 1T4R storage structure. The company is currently moving forward with chip verification. This development marks a key milestone in transitioning high-density 1TnR storage technology from laboratory research to Gb-level commercial productization. It offers a globally competitive solution to help address the 'memory wall' bottleneck for artificial intelligence and data center applications. The MountTai-1 chip achieves a storage density of 30Mb/mm² with an access latency of less than 20 nanoseconds, and it integrates on-chip hardware error correction circuits. Its 1T4R architecture connects four resistive switching memory cells via a single selection transistor to enhance storage density.
## BACKGROUND
RRAM (Resistive Random Access Memory) is an emerging non-volatile memory technology that changes the resistance of a dielectric material to store data, offering high speed and low power consumption. Tape-out refers to the final stage of the integrated circuit design process where the layout is sent to a manufacturing foundry for production, serving as a critical verification step before mass production.