Chinese Scientists Achieve Controlled Directional Sliding in 2D Sliding Ferroelectric Materials

Researchers in China have achieved controlled directional interlayer sliding in two-dimensional sliding ferroelectric materials for the first time. By applying uniaxial strain to bilayer boron nitride, the team broke its threefold rotational symmetry, enabling polarization switching along a single pre-determined direction in just 1.7 picoseconds. This breakthrough addresses the long-standing challenge of uncontrolled sliding paths in 2D ferroelectrics, unlocking a reliable mechanism for state switching. Operating 3 to 4 orders of magnitude faster than conventional ferroelectrics while immune to mechanical fatigue, this technique opens new pathways for ultra-fast, ultra-low-power electronic memory. The researchers combined first-principles quantum calculations with AI-assisted deep potential molecular dynamics simulations to model the movement of millions of atoms at femtosecond scales. Under an external electric field, the applied strain forces atomic layers to slide exclusively from BA stacking to AB stacking in a one-way directional lock.