China's First 12-Inch Polycrystalline Silicon Carbide Substrate Debuts

Titan Future Technology has released China's first 12-inch polycrystalline silicon carbide substrate designed to solve AI chip thermal dissipation bottlenecks. The product has already passed TSMC's certification testing and is being sampled by Samsung. This breakthrough addresses critical thermal management limitations in advanced AI hardware and high-performance computing packaging. Breaking foreign monopolies on large-scale polycrystalline silicon carbide production helps secure domestic semiconductor supply chains and reduce costs. The 12-inch substrate achieves a thermal conductivity exceeding 300W/(m·K), features a deposition rate of 60 micrometers per hour, and maintains a low resistivity of under 1 milliohm-centimeter. The project is currently transitioning from sample verification to small-batch trial production, with commercial scaling expected after 2027.